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Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
Published on: December 5, 2015
Weak ferroelectric charge transfer in layer-asymmetric bilayers of 2D semiconductors
Fábio Ferreira1,2, Vladimir V Enaldiev1,2,3, Vladimir I Fal'ko1,2,4
1Department of Physics and Astronomy, University of Manchester, Manchester, M13 9PL, UK.
Abstract:
In bilayers of two-dimensional semiconductors with stacking arrangements which lack inversion symmetry charge transfer between the layers due to layer-asymmetric interband hybridisation can generate a potential difference between the layers. We analyse bilayers of transition metal dichalcogenides (TMDs)-in particular, [Formula: see text]-for which we find a substantial stacking-dependent charge transfer, and InSe, for which the charge transfer is found to be negligibly small. The information obtained about TMDs is then used to map potentials generated by the interlayer charge transfer across the moiré superlattice in twistronic bilayers.
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