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Columnar nitrogen-doped ZnO nanostructured thin films obtained through atomic layer deposition.

J Rodríguez-López1, R Rangel1, A Ramos-Carrazco2

  • 1División de Estudios de Posgrado de la Facultad de Ingeniería Química, Universidad Michoacana de San Nicólas de Hidalgo, Morelia, Michoacán, Mexico.

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Summary

This study developed nitrogen-doped nanostructured zinc oxide (ZnO) thin films using atomic layer deposition and hydrothermal methods. The N-doped films showed altered crystal structures and reduced bandgaps, offering a viable route for high-quality N-ZnO materials.

Keywords:
ZnOatomic layer depositionmicrowave heatingnanostructured thin filmsnitrogen doping

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Solid State Chemistry

Background:

  • Zinc oxide (ZnO) is a versatile semiconductor with applications in electronics and optoelectronics.
  • Developing nanostructured and doped ZnO thin films is crucial for enhancing its properties.
  • Nitrogen doping is a promising strategy to modify ZnO's electronic and optical characteristics.

Purpose of the Study:

  • To develop nitrogen-doped nanostructured ZnO thin films using a sequential atomic layer deposition and hydrothermal process.
  • To investigate the impact of nitrogen doping concentration on the physicochemical properties of ZnO thin films.
  • To establish a viable method for producing high-quality N-doped ZnO nanostructured thin films.

Main Methods:

  • Atomic Layer Deposition (ALD) for growing a ZnO seed layer on a Si (100) substrate using diethylzinc (DEZn) and H2O.
  • Microwave-assisted solvothermal process for growing columnar ZnO nanostructures using Zn(NO3)2 and hexamethylenetetramine (HMTA).
  • Structural and chemical characterization using Scanning Electron Microscopy (SEM), X-ray Diffraction (XRD), X-ray Photoelectron Spectroscopy (XPS), Raman, and UV-Vis spectroscopy.

Main Results:

  • Nitrogen-doped ZnO films exhibited textured wurtzite-like structures.
  • The preferential growth plane shifted from (002) to (100) with increasing nitrogen precursor concentration.
  • A reduction in the bandgap was observed for nitrogen-doped ZnO films compared to undoped ZnO.
  • The developed methodology successfully produced high-quality N-ZnO nanostructured thin films.

Conclusions:

  • The sequential ALD and microwave-assisted solvothermal method is effective for fabricating N-doped nanostructured ZnO thin films.
  • Nitrogen doping significantly influences the structural and optical properties of ZnO, including crystal orientation and bandgap.
  • The findings provide a foundation for advanced applications of N-doped ZnO nanomaterials.