Silicon Oxide Etching Process of NF₃ and F₃NO Plasmas with a Residual Gas Analyzer

The use of NF₃ is significantly increasing every year. However, NF₃ is a greenhouse gas with a very high global warming potential. Therefore, the development of a material to replace NF₃ is required. F₃NO is considered a potential replacement to NF₃. In this study, the characteristics and cleaning performance of the F₃NO plasma to replace the greenhouse gas NF₃ were examined. Etching of SiO₂ thin films was performed, the DC offset of the plasma of both gases (i.e., NF₃ and F₃NO) was analyzed, and a residual gas analysis was performed. Based on the analysis results, the characteristics of the F₃NO plasma were studied, and the SiO₂ etch rates of the NF₃ and F₃NO plasmas were compared. The results show that the etch rates of the two gases have a difference of 95% on average, and therefore, the cleaning performance of the F₃NO plasma was demonstrated, and the potential benefit of replacing NF₃ with F₃NO was confirmed.