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Quantification of Trace-Level Silicon Doping in Al Ga1-N Films Using Wavelength-Dispersive X-Ray Microanalysis.

Lucia Spasevski1, Ben Buse2, Paul R Edwards1

  • 1Department of Physics, SUPA, University of Strathclyde, GlasgowG4 0NG, UK.

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Summary

This study addresses discrepancies in measuring silicon doping in AlxGa1-xN films using Wavelength-Dispersive X-ray (WDX) spectroscopy. A new calibration method corrects for sample contamination, improving accuracy for n-type semiconductor devices.

Keywords:
electron probe microanalysissecondary ion mass spectrometrysemiconductor analysissilicon dopingtrace-element analysis

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Area of Science:

  • Materials Science
  • Semiconductor Physics
  • Analytical Chemistry

Background:

  • Silicon (Si) doping is crucial for creating n-type conductivity in Aluminum Gallium Nitride (AlxGa1-xN) and Gallium Nitride (GaN) for electronic devices.
  • Wavelength-Dispersive X-ray (WDX) spectroscopy is used for elemental analysis, but discrepancies exist when quantifying Si in AlxGa1-xN compared to Secondary Ion Mass Spectrometry (SIMS).

Purpose of the Study:

  • To identify the cause of the discrepancy in Si quantification between WDX and SIMS in AlxGa1-xN films.
  • To develop a corrected WDX method for accurate Si concentration measurements in n-type AlxGa1-xN.
  • To establish a cost-effective and time-saving approach for Si doping analysis.

Main Methods:

  • Utilized Wavelength-Dispersive X-ray (WDX) spectroscopy with an electron probe microanalyser.
  • Employed cathodoluminescence (CL) spectrometry for simultaneous signal measurement.
  • Developed a calibration relation combining WDX and SIMS data from both GaN and AlxGa1-xN samples to account for ZAF correction variations and sample contamination.

Main Results:

  • Identified inherent sample contamination as the cause of WDX/SIMS discrepancies in Si quantification.
  • Proposed and validated a calibration method to correct for contamination, enabling accurate Si concentration measurements (35-100 ppm).
  • Demonstrated the method's effectiveness in accounting for variations in ZAF corrections.

Conclusions:

  • The developed calibration method provides accurate and reliable quantification of Si doping in AlxGa1-xN films.
  • This approach offers a cost-effective and time-efficient alternative for Si doping analysis in semiconductor research and development.
  • The method allows for simultaneous measurement of other signals like CL, enhancing material characterization capabilities.