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CMOS-Compatible Protonic Programmable Resistor Based on Phosphosilicate Glass Electrolyte for Analog Deep Learning.

Murat Onen^1,2, Nicolas Emond^2,3, Ju Li^2,3,4

¹Microsystems Technology Laboratories, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, United States.

|July 7, 2021

Summary

Researchers developed a novel protonic programmable resistor using phosphosilicate glass (PSG) for analog deep learning. This CMOS-compatible device offers high speed, low energy use, and excellent endurance, paving the way for advanced AI hardware.

Keywords:

analog computing doped silicon dioxide films programmable resistors proton intercalation

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Area of Science:

Materials Science
Electrical Engineering
Computer Science

Background:

Ion intercalation programmable resistors are key for analog deep learning.
Protons offer advantages like speed, low energy, and endurance due to their small size.

Purpose of the Study:

To develop the first back-end CMOS-compatible nonvolatile protonic programmable resistor.
To utilize phosphosilicate glass (PSG) as a proton solid electrolyte for enhanced device performance.

Main Methods:

Integration of phosphosilicate glass (PSG) as a proton solid electrolyte layer.
Fabrication of scaled all-solid-state three-terminal devices.
Characterization of device modulation characteristics, including symmetry, retention, endurance, and energy efficiency.

Main Results:

Demonstrated a CMOS-compatible nonvolatile protonic programmable resistor.
Phosphosilicate glass exhibited excellent protonic conduction and electronic insulation.
Devices showed desirable modulation characteristics and energy efficiency.

Conclusions:

Phosphosilicate glass (PSG) is a viable material for protonic programmable resistors.
These devices are promising for nanoscale analog crossbar processors.
The technology enables monolithic CMOS integration for advanced AI applications.