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Defect Engineering in Ultrathin SnSe Nanosheets for High-Performance Optoelectronic Applications.

Feng Li¹, Hualong Chen¹, Lei Xu²

¹Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.

ACS Applied Materials & Interfaces

|July 8, 2021

Summary

Ultrathin tin selenide nanosheets with controlled selenium defects were synthesized, significantly boosting photodetector performance. This method offers a promising route for high-efficiency optoelectronic devices.

Keywords:

Se vacancies SnSe nanosheets defect engineering optoelectronic recombination dynamics

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Area of Science:

Materials Science
Nanotechnology
Optoelectronics

Background:

Ultrathin lamellar tin selenide (SnSe) shows promise for photonics and optoelectronics due to its band gap and carrier mobility.
Challenges include difficult preparation and low photoelectric conversion efficiencies in SnSe nanosheet (NS) devices.

Purpose of the Study:

To develop a high-yield synthesis method for ultrathin SnSe NSs with controlled selenium (Se) defects.
To investigate the impact of Se defects on the photoelectric properties of SnSe NSs and their photodetector performance.

Main Methods:

Facial lithium intercalation-assisted liquid exfoliation method for SnSe NS synthesis.
Controlled lithiation process (24h vs. 72h) to introduce Se defects.
Fabrication and characterization of photodetector devices using synthesized SnSe NSs.

Main Results:

Synthesis of ultrathin SnSe NSs with controlled Se defects and high yield.
Longer lithiation (72h) led to Se loss, band gap narrowing, and increased lattice disorders.
Photodetector devices using 72h lithiation SnSe NSs showed 4-10 times enhancement in photocurrent, photoresponsivity, photoresponse speed, and specific detectivity.
Devices exhibited good stability and broad spectral detection (UV to NIR).

Conclusions:

Controlled Se defects in SnSe NSs, achieved via optimized lithiation, significantly enhance photodetector performance.
The Li intercalation-assisted liquid exfoliation method is a viable route for mass production of high-performance SnSe NSs.
These findings open opportunities for advanced applications in photonics, optoelectronics, and photocatalysis.