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Standard Light Scattering Tomography (LST) cannot detect defects in silicon (Si) (111) wafers due to cleavage angles. A modified LST system with a tilted detector enables Si (111) wafer defect analysis, validating new measurement capabilities.

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Area of Science:

  • Materials Science
  • Semiconductor Manufacturing
  • Optical Metrology

Background:

  • Bulk micro-defect detection in Czochralski-grown silicon (Si) wafers is crucial for quality control.
  • Light Scattering Tomography (LST) is an industry-standard optical non-contact metrology for defect detection.
  • Standard LST requires sample cleavage, which is perpendicular for Si (100) but not for Si (111) wafers.

Purpose of the Study:

  • To present a modified Light Scattering Tomography (LST) system capable of measuring defects in Si (111) wafers.
  • To detail the design and measurement capabilities of the modified LST system.
  • To validate the new technique by comparing results with standard LST measurements.

Main Methods:

  • Modification of a standard LST system by tilting the detection unit.
  • Cleaving Si (100) and Si (111) wafers for sample preparation.
  • Performing defect detection measurements on Si (111) wafers using the modified LST system.

Main Results:

  • The modified LST system successfully enables defect detection in Si (111) wafers.
  • The cleavage angle of 70.5° for Si (111) wafers, which prevents standard LST measurement, is overcome by tilting the detector.
  • Measurement results from the modified system are validated against standard LST on Si (100) samples.

Conclusions:

  • A modified LST system with a tilted detector is a viable technique for detecting bulk micro-defects in Si (111) wafers.
  • This advancement expands the applicability of LST to all major silicon wafer orientations.
  • The developed technique ensures accurate wafer quality control for both Si (100) and Si (111) types.