Timing characterization of fast hCMOS sensors.

Area of Science:

• Physics
• Engineering
• Imaging Science

Background:

• Ultrafast x-ray imagers are crucial for high-speed imaging applications.
• Accurate temporal characterization of these imagers is essential for reliable data acquisition.
• Existing methods struggle with background oscillations and in-sensor variations.

Purpose of the Study:

• To develop a robust method for analyzing gate profile data in ultrafast x-ray imagers.
• To enable pixel-by-pixel determination of temporal sensitivity.
• To correct systematic timing errors and characterize in-sensor variations.

Main Methods:

• Analysis of gate profile data from ultrafast x-ray imagers.
• Pixel-by-pixel temporal sensitivity determination.
• Correction of gate width and arrival time errors.

Main Results:

• The method effectively removes systematic timing errors up to 1 ns.
• In-sensor variations in gate arrival and width were quantified (up to 0.5 ns).
• Accurate temporal sensitivity was achieved despite background oscillations.

Conclusions:

• The described method provides accurate pixel-level temporal sensitivity for ultrafast x-ray imagers.
• It significantly improves timing error correction and sensor characterization.
• This technique enhances the reliability and precision of high-speed x-ray imaging.