A review on two-dimensional materials for chemiresistive- and FET-type gas sensors
Jian Zhang1, Lei Liu2, Yan Yang2
1State Key Laboratory of Materials Processing and Die Mould Technology, Huazhong University of Science and Technology (HUST), No. 1037, Luoyu Road, Wuhan 430074, China. dwzeng@mail.hust.edu.cn and Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China.
Abstract:
Two-dimensional (2D) materials have shown great potential for gas sensing applications due to their large specific surface areas and strong surface activities. In addition to the commonly reported chemiresistive-type gas sensors, field-effect transistor (FET)-type gas sensors have attracted increased attention due to their miniaturized size, low power consumption, and good compatibility with CMOS technology. In this review, we aim to discuss the recent developments in chemiresistive- and FET-type gas sensors based on 2D materials, including graphene, transition metal dichalcogenides, MXenes, black phosphorene, and other layered materials. Firstly, the device structure and the corresponding fabrication process of the two types of sensors are given, and then the advantages and disadvantages are also discussed. Secondly, the effects of intrinsic and extrinsic factors on the sensing performance of 2D material-based chemiresistive and FET-type gas sensors are also detailed. Subsequently, the current gas-sensing applications of 2D material-based chemiresistive- and FET-type gas sensors are systematically presented. Finally, the future prospects of 2D materials in chemiresistive- and FET-type gas sensing applications as well as the current existing problems are pointed out, which could be helpful for the development of 2D material-based gas sensors with better sensing performance to meet the requirements for practical application.
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