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Functional bipolar resistive switching in AlN/Ni-Mn-In based magnetoelectric heterostructure.

Pradeep Kumar1, Davinder Kaur1

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|July 26, 2021
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Summary

Temperature significantly impacts the performance of AlN/Ni-Mn-In magnetoelectric heterostructure resistive random access memory (ReRAM). Lowering temperature alters SET voltage, crucial for tuneable ReRAM applications.

Keywords:
magnetoelectric heterostructuremagnetostrictive effectpiezoelectric effectresistive switchingtemperature

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Device Physics

Background:

  • Resistive random access memory (ReRAM) is a promising non-volatile memory technology.
  • Magnetoelectric (ME) heterostructures offer unique properties for advanced electronic devices.
  • Understanding temperature effects is crucial for reliable ReRAM operation.

Purpose of the Study:

  • To investigate the influence of temperature on the resistive switching characteristics of AlN/Ni-Mn-In ME heterostructure-based ReRAM.
  • To elucidate the conduction mechanisms in high resistance state (HRS) and low resistance state (LRS) as a function of temperature.
  • To explore the role of strain-mediated coupling in temperature-dependent SET voltage variations.

Main Methods:

  • Fabrication of a Cu/AlN/Ni-Mn-In/Si based ReRAM device.
  • Characterization of current-voltage (I-V) properties across a range of temperatures.
  • Analysis of temperature-dependent resistance to confirm conduction mechanisms.
  • Modeling of conduction in LRS based on copper metallic filament formation.
  • Investigation of SET voltage variation with temperature and its relation to ME coupling.

Main Results:

  • The device demonstrated stable bipolar resistive switching with a sharp HRS to LRS transition.
  • HRS is governed by trap-controlled space charge limited conduction, while LRS follows Ohmic conduction.
  • Temperature-dependent resistance confirmed these conduction mechanisms.
  • A significant decrease in SET voltage was observed with decreasing temperature, attributed to strain-mediated coupling.
  • The device achieved an OFF/ON ratio of ~3x10^3, with good endurance (~1000 cycles) and retention (~900 s).

Conclusions:

  • Temperature plays a critical role in the resistive switching behavior of AlN/Ni-Mn-In ME heterostructure ReRAM.
  • Strain-mediated coupling in the ME heterostructure is responsible for the observed temperature dependence of the SET voltage.
  • The findings highlight the potential of ME heterostructures for developing tuneable and reliable ReRAM devices for future applications.