Uncovering recent progress in nanostructured light-emitters for information and communication technologies
Frédéric Grillot1,2, Jianan Duan3,4, Bozhang Dong3
1LTCI, Institut Polytechnique de Paris, Télécom Paris, 19 place Marguerite Perey, 91120, Palaiseau, France. grillot@telecom-paris.fr.
Light, Science & Applications
|July 30, 2021
Summary
Semiconductor quantum dots and dashes enable high-performance photonic devices. These nanostructures offer unique quantum phenomena for advanced light emitters and quantum information systems.
Area of Science:
- Optoelectronics and Nanotechnology
- Quantum Physics
Background:
- Low-dimensional semiconductor nanostructures, such as quantum dots and quantum dashes, are crucial for advanced photonic devices.
- Nanoscale size effects lead to quantum phenomena like carrier spatial quantization and energy level discretization.
Purpose of the Study:
- To review recent findings and prospects of nanostructure-based light emitters.
- To link material properties with device physics for quantum dot and dash light emitters.
Main Methods:
- Examination of spectral linewidth, polarization anisotropy, optical nonlinearities.
- Analysis of microwave, dynamic, and nonlinear properties of nanostructure-based devices.
- Focus on devices grown on native (InP, GaAs) and silicon substrates.
Main Results:
- Nanostructures enable unique quantum phenomena for light emission.
- Detailed examination of various physical properties relevant to device performance.
- Successful heterogeneous integration on silicon substrates.
Conclusions:
- Semiconductor nanostructures are key for next-generation photonic devices.
- These advancements are vital for future information and communication technologies.
- Nanotechnology plays a significant role in industrial and societal progress.
