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Understanding Electrical Conduction and Nanopore Formation During Controlled Breakdown.

Jasper P Fried¹, Jacob L Swett¹, Binoy Paulose Nadappuram²

¹Department of Materials, University of Oxford, Oxford, OX1 3PH, UK.

Small (Weinheim an Der Bergstrasse, Germany)

|August 2, 2021

Summary

Controlled breakdown fabricates solid-state nanopores for biosensing. For silicon nitride (SiN_x) membranes, conduction mechanisms depend on stoichiometry, impacting nanopore formation and future on-chip integration.

Keywords:

dielectric breakdown nanofabrication single-molecule biosensing solid-state nanopores

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Area of Science:

Materials Science
Nanotechnology
Electrochemistry

Background:

Controlled dielectric breakdown is a key technique for fabricating solid-state nanopores.
These nanopores are crucial for various biosensing applications.
The underlying mechanisms of conduction and breakdown in these membranes remain underexplored.

Purpose of the Study:

To investigate the electrical conduction and nanopore formation mechanisms in silicon nitride (SiN_x) membranes during controlled breakdown.
To differentiate the conduction behavior based on SiN_x stoichiometry.

Main Methods:

Application of an electric field (0.4-1 V nm^-1) across SiN_x membranes to induce current and breakdown.
Analysis of electrical conduction properties.
Characterization of nanopore formation.

Main Results:

In Si-rich SiN_x, oxidation reactions at the membrane-electrolyte interface significantly limit dielectric conduction.
In stoichiometric Si₃N₄, oxidation effects are minimal, with charge transport across the dielectric being the primary conduction limitation.
Demonstrated distinct conduction mechanisms based on membrane composition.

Conclusions:

Understanding the role of stoichiometry in conduction mechanisms is vital for controlled nanopore fabrication.
These findings will advance the development of controlled breakdown techniques.
Facilitates the integration of nanopores with on-chip nanostructures for enhanced biosensing platforms.