Related Experiment Video
Updated: Oct 26, 2025

A Method for Growing Bio-memristors from Slime Mold
Published on: November 2, 2017
Deterministic modeling of the diffusive memristor
A Akther1, Y Ushakov1, A G Balanov1
1Department of Physics, Loughborough University, Loughborough LE11 3TU, United Kingdom.
Abstract:
Recently developed diffusive memristors have gathered a large amount of research attention due to their unique property to exhibit a variety of spiking regimes reminiscent to that found in biological cells, which creates a great potential for their application in neuromorphic systems of artificial intelligence and unconventional computing. These devices are known to produce a huge range of interesting phenomena through the interplay of regular, chaotic, and stochastic behavior. However, the character of these interplays as well as the instabilities responsible for different dynamical regimes are still poorly studied because of the difficulties in analyzing the complex stochastic dynamics of the memristive devices. In this paper, we introduce a new deterministic model justified from the Fokker-Planck description to capture the noise-driven dynamics that noise has been known to produce in the diffusive memristor. This allows us to apply bifurcation theory to reveal the instabilities and the description of the transition between the dynamical regimes.
More Related Videos
Related Concept Videos
Modeling of Diode Forward Characteristics
Carrier Transport
Drift Current:
The drift of charge carriers is started by an external electric field (E). Charged particles, such as electrons and holes, experience an acceleration between collisions with lattice atoms. For electrons, this results in a drift velocity (vd) given by:
MOS Capacitor
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
Small-signal Diode Model
Modeling of Diode Reverse Characteristics
When a reverse voltage applied to a Zener diode exceeds its breakdown voltage, the diode enters the breakdown region. At this point, the...
Characteristics of MOSFET
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...

