Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

542
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
542
MOSFET01:16

MOSFET

704
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
704
MOSFET: Depletion Mode01:20

MOSFET: Depletion Mode

539
Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
539
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

383
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
383
MOS Capacitor01:25

MOS Capacitor

1.1K
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
1.1K
Schottky Barrier Diode01:27

Schottky Barrier Diode

581
Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
581

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Field-resolved observation of exciton coherence in a van der Waals magnet.

Nature materials·2026
Same author

Bandwidth of Lightwave-Driven Electronic Response from Metallic Nanoantennas.

Nano letters·2025
Same author

On-chip petahertz electronics for single-shot phase detection.

Nature communications·2024
Same author

Isolating Attosecond Electron Dynamics in Molecules where Nuclei Move Fast.

Physical review letters·2022
Same author

Strong-field coherent control of isolated attosecond pulse generation.

Nature communications·2021
Same author

Publisher's Note: "Precise, subnanosecond, and high-voltage switching enabled by gallium nitride electronics integrated into complex loads" [Rev. Sci. Instrum. 92, 074704 (2021)].

The Review of scientific instruments·2021

Related Experiment Video

Updated: Oct 26, 2025

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

15.0K

Precise, subnanosecond, and high-voltage switching enabled by gallium nitride electronics integrated into complex

John W Simonaitis1, Benjamin Slayton2, Yugu Yang-Keathley2

  • 1Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA.

The Review of Scientific Instruments
|August 3, 2021
PubMed
Summary

Commercial gallium nitride (GaN) power electronics, specifically GaN field effect transistors (GaNFETs), enable precise switching of complex loads. This technology allows for integrated pulsers, faster switching, and high-voltage transitions for various scientific applications.

More Related Videos

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
15:47

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

16.5K
Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
10:31

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

Published on: November 24, 2016

8.8K

Related Experiment Videos

Last Updated: Oct 26, 2025

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

15.0K
Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
15:47

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

16.5K
Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
10:31

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

Published on: November 24, 2016

8.8K

Area of Science:

  • Power Electronics
  • Semiconductor Devices
  • Applied Physics

Background:

  • Complex distributed loads in scientific instruments require precise and fast switching capabilities.
  • Traditional switching methods face limitations in speed, form-factor, and operating conditions.

Purpose of the Study:

  • To report the use of commercial gallium nitride (GaN) power electronics for precise switching of complex distributed loads.
  • To demonstrate the integration of pulsers directly into loads using GaN field effect transistors (GaNFETs).

Main Methods:

  • Utilized commercial GaN field effect transistors (GaNFETs) for integrated pulser design.
  • Investigated GaNFETs for their small form-factor, low-power dissipation, and high-temperature compatibility.
  • Experimentally demonstrated a 250 ps, 100 V pulser and simulated performance with various load structures.

Main Results:

  • Achieved precise switching of complex loads with sub-nanosecond rise times.
  • Demonstrated GaN pulsers capable of generating 100 to 650 V and 5 to 60 A pulses in 0.25-8 ns.
  • Successfully tested circuits under vacuum and at temperatures up to 120 °C, showing flexibility and robustness.

Conclusions:

  • Integrated GaN pulsers offer a solution for high-speed, high-voltage switching in demanding environments.
  • The technology reduces parasitics and eliminates the need for impedance matching, enabling faster and more precise control.
  • Expected broad applications in optics, nuclear sciences, charged particle optics, and atomic physics.