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Lattice Centering and Coordination Number02:33

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Quantum Emitter Localization in Layer-Engineered Hexagonal Boron Nitride.

James Callum Stewart1, Ye Fan1, John S H Danial2

  • 1Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 0FA, United Kingdom.

ACS Nano
|August 4, 2021
PubMed
Summary
This summary is machine-generated.

Researchers precisely located quantum emitters in hexagonal boron nitride (hBN) across all three dimensions. This breakthrough enables scalable, 2D quantum device fabrication for advanced photonic circuits.

Keywords:
2D materialsgraphenehBNpoint defectsquantum emissionsingle-photon emissionspectroscopy

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Area of Science:

  • Quantum optics and photonics
  • Materials science and engineering
  • Solid-state physics

Background:

  • Hexagonal boron nitride (hBN) is a key 2D material for solid-state quantum emitters.
  • Deterministic, scalable localization of emitters in 3D remains a significant challenge.
  • Maintaining hBN's 2D properties during emitter localization is crucial for device performance.

Purpose of the Study:

  • To demonstrate 3D emitter localization in hBN using monolayer engineering.
  • To develop methods for controlling and preserving quantum emitter properties.
  • To enable scalable fabrication of addressable quantum emitter arrays.

Main Methods:

  • Engineered hBN monolayers (MLs) with pre-treatment processes to control emission.
  • Utilized differently treated MLs for atomic-layer vertical (z) emitter localization.
  • Employed a patterned graphene mask for lateral (x-y) emitter localization via fluorescence quenching.
  • Protected ML hBN emitters by sandwiching them between additional hBN MLs to suppress bleaching.

Main Results:

  • Achieved deterministic 3D localization of quantum emitters in hBN.
  • Demonstrated vertical localization at the atomic layer level.
  • Successfully suppressed emitter bleaching in thin hBN stacks.
  • Showcased lateral localization using a graphene mask, enabling site-specific control.

Conclusions:

  • Monolayer engineering provides a versatile platform for 3D emitter localization in hBN.
  • This approach is compatible with scalable, planar processing for quantum device fabrication.
  • Enables tailored designs for addressable emitter arrays, monolithic integration, and photonic circuits.