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Updated: Oct 25, 2025
11:42
Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
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Monolayer Twisted Graphene-Based Schottky Transistor
Ramin Ahmadi1, Mohammad Taghi Ahmadi1, Seyed Saeid Rahimian Koloor2
1Nano-Physics Group, Nano-Technology Research Center, Physics Department, Faculty of Science, Urmia University, Urmia 5756151818, Iran.
Materials (Basel, Switzerland)
|August 7, 2021
Summary
Researchers explored twisted graphene
Area of Science:
- Nanoelectronics
- Materials Science
- Condensed Matter Physics
Background:
- Graphene's unique properties drive innovation in nanoelectronic devices.
- Twisted graphene emerges as a novel structure with potential for advanced applications.
Purpose of the Study:
- Investigate the geometric effects of twisted graphene on Schottky transistor performance.
- Analyze the relationship between twist diameter, number of twists, and device characteristics.
Main Methods:
- Utilized dispersion relation and quantum tunneling to model device behavior.
- Simulated a metal-semiconductor-metal twisted graphene-based junction as a Schottky transistor.
- Examined performance variations concerning channel length, twist diameter, and twist number.
Main Results:
- Smaller twisted graphene diameters significantly impact Schottky transistor efficiency.
- Investigated the drain current-gate-source voltage (ID-VGS) characteristics.
- Observed an increase in threshold voltage with larger diameters and higher twist numbers.
Conclusions:
- Twisted graphene geometry critically influences Schottky transistor performance.
- Device parameters like diameter and twist number offer control over transistor characteristics.
- This study highlights twisted graphene's potential in next-generation transistor technology.
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