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Updated: Oct 25, 2025

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Monolayer Twisted Graphene-Based Schottky Transistor
Ramin Ahmadi1, Mohammad Taghi Ahmadi1, Seyed Saeid Rahimian Koloor2
1Nano-Physics Group, Nano-Technology Research Center, Physics Department, Faculty of Science, Urmia University, Urmia 5756151818, Iran.
Abstract:
The outstanding properties of graphene-based components, such as twisted graphene, motivates nanoelectronic researchers to focus on their applications in device technology. Twisted graphene as a new class of graphene structures is investigated in the platform of transistor application in this research study. Therefore, its geometry effect on Schottky transistor operation is analyzed and the relationship between the diameter of twist and number of twists are explored. A metal-semiconductor-metal twisted graphene-based junction as a Schottky transistor is considered. By employing the dispersion relation and quantum tunneling the variation of transistor performance under channel length, the diameter of twisted graphene, and the number of twists deviation are studied. The results show that twisted graphene with a smaller diameter affects the efficiency of twisted graphene-based Schottky transistors. Additionally, as another main characteristic, the ID-VGS is explored, which indicates that the threshold voltage is increased by diameter and number of twists in this type of transistor.
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