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Strong Interminivalley Scattering in Twisted Bilayer Graphene Revealed by High-Temperature Magneto-Oscillations
I Y Phinney1, D A Bandurin1, C Collignon1
1Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA.
Physical Review Letters
|August 16, 2021
Summary
High-temperature magneto-oscillations in twisted bilayer graphene (TBG) reveal strong scattering between charge carriers in TBG minivalleys. This scattering impacts electron transport and electron-electron collision rates, exceeding those in monolayer graphene.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Nanotechnology
Background:
- Twisted bilayer graphene (TBG) exhibits complex electron transport due to interlayer interactions and superlattice structure.
- Understanding electron scattering mechanisms is crucial for explaining resistivity in TBG.
Purpose of the Study:
- To investigate the origins of electron scattering in TBG.
- To analyze high-temperature magneto-oscillations in TBG.
- To determine the electron-electron collision rate in TBG.
Main Methods:
- Observation of high-temperature magneto-oscillations in TBG.
- Analysis of oscillation amplitude to quantify interminivalley scattering.
- Temperature dependence studies to estimate electron-electron collision rates.
Main Results:
- High-temperature magneto-oscillations in TBG are attributed to charge carrier scattering between minivalleys.
- Interminivalley scattering is found to be strong, with a timescale comparable to intraminivalley scattering.
- Electron-electron collision rates in TBG are higher than in monolayer graphene.
Conclusions:
- The study elucidates the significant role of interminivalley scattering in TBG's electronic properties.
- The findings highlight the impact of superlattice Brillouin zone size and Fermi velocity reduction on lateral transport in TBG.
- This research provides insights into the fundamental mechanisms governing electron behavior in twisted bilayer graphene.
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