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Updated: Oct 23, 2025

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
Published on: December 5, 2015
Surface Ohmic Conductivity on a Mott Insulator Based on a One-dimensional Bromide-bridged Nickel(III) Complex
Masanori Wakizaka1, Hiroaki Iguchi1, Shinya Takaishi1
1Department of Chemistry, Graduate School of Science, Tohoku University, 6-3 Aramaki-Aza-Aoba, Aoba-Ku, Sendai, 980-8578, Japan.
Abstract:
Ohmic contacts are of critical importance to improve the performance of semiconductor devices as well as those of low-dimensional materials. Halogen-bridged metal complexes (MX-Chains) are fascinating quasi-one-dimensional (1D) electronic materials. However, reports on the electrical characteristics of MX-Chains remain elusive. Herein, we report the electrical characteristics of single crystals of [Ni(chxn)2 Br]Br2 (chxn: (1R,2R)-(-)-1,2-cyclohexanediamine), which is a 1D Mott insulator, using different probe arrangements. [Ni(chxn)2 Br]Br2 was shown for the first time to exhibit Ohmic characteristics on the crystal surface, albeit that the conductivity behavior of the interior of the crystal is nonlinear due to the Joule heating effect. The current flow on the surface is shallow (a few micrometers in depth) despite the millimeter-scale crystal size; this phenomenon is strongly connected to its structural anisotropy. The Ohmic contact revealed in this work should be valuable for the application of MX-Chains as electronic devices in the near future.
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