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Interlayer engineering for enhanced ferroelectric tunnel junction operations in HfO-based

Kyung Kyu Min1,2, Junsu Yu1, Yeonwoo Kim1

  • 1Inter-University Semiconductor Research Center, Department of Electrical and Computer Engineering, Seoul National University, Seoul 151-744, Republic of Korea.

Nanotechnology
|August 17, 2021
PubMed
Summary

Interlayer engineering in ferroelectric tunnel junctions (FTJs) using an Al2O3 layer significantly enhances device performance. This boosts read disturbance immunity, endurance, and reduces cell variation for next-generation low-power memory devices.

Keywords:
ferroelectric hafnium oxide (HfO x )ferroelectric tunnel junctioninterlayer engineering

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