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Updated: Oct 23, 2025

Negative Additive Manufacturing of Complex Shaped Boron Carbides
Published on: September 18, 2018
High Thermal Conductivity of Wurtzite Boron Arsenide Predicted by Including Four-Phonon Scattering with Machine
Zhichao Liu1,2, Xiaolong Yang1,2, Bo Zhang1
1Institute for Advanced Study, Shenzhen University, Nanhai Avenue 3688, Shenzhen 518060, China.
Abstract:
Materials with high thermal conductivity are of great importance to the thermal management of modern electronic devices. Recently, it was found that cubic boron arsenide (c-BAs) is a high thermal conductivity (κ) material with a value of ∼1300 W/(m·K) at room temperature (RT), where four-phonon scattering plays a crucial role in limiting the κ. In this work, with four-phonon scattering included, we find that the κ of wurtzite BAs (w-BAs) reaches as high as 1036 W/(m·K) along the a-b plane at RT, decreasing by 43% compared to the calculation without considering four-phonon scattering. The similar phonon transport properties between c-BAs and w-BAs can be understood in terms of similar projected density of states and scattering rates, which have the origin in crystal structural resemblance. To accelerate the calculation, the moment tensor potential derived from machine learning is adopted and proven to be a reliable and efficient method to obtain high-order interatomic force constants.
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