Nanowire gate all around-TFET-based biosensor by considering ambipolar transport

This work investigated the performance of overlapped gate-on-drain of a gate all around-tunnel field-effect transistor (GAA-TFET) biosensors by considering the dielectric modulated technique by immobilizing the targeted biomolecules in the cavity region curved under the overlapped gate-on-drain. The nanowire GAA-TFET device shows excellent controllability over the channel and reduces leakage current to a greater extent. Here, we tried to make the ambipolar nature of the TFET, an advantage for the biosensor by detecting the biomolecule using variation of ambipolar current of TFET. Due to structural arrangement, the nanocavity under the overlapped gate region suppresses the ambipolar drain current by increasing the dielectric constant of the targeted biomolecules. The device can show a variation of 10² and 10³ amount of sensitivity for the variation of dielectric constant from 1 to 5 and, compared with the other TFET structure, the proposed overlapped gate-on-drain GAA-TFET biosensor shows higher sensitivity and low leakage with a highly controlled channel.