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Fabrication of 2D PdSe2/3D CdTe Mixed-Dimensional van der Waals Heterojunction for Broadband Infrared Detection
Di Wu1, Zhiheng Mo1, Yanbing Han1
1School of Physics and Microelectronics, and Key Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052, China.
Abstract:
Room-temperature infrared photodetectors are in great demand because of their vitally important applications in the military and civilian fields, which has inspired intensive studies in recent decades. Here, we present the fabrication of a large-size PdSe2/CdTe mixed-dimensional van der Waals (vdW) heterojunction for room-temperature infrared detection. Taking advantage of the wide light absorption of the multilayer PdSe2, high-quality vdW interface, and unique mixed-dimensional device geometry, the present device is capable of detecting an ultrawide light up to long-wave infrared (LWIR) of 10.6 μm at room temperature. In addition, our photodetector exhibits a good capability to follow short pulse infrared signals with a quick response rate of 70 ns, a large responsivity of 324.7 mA/W, and a reasonable specific detectivity of 3.3 × 1012 Jones. Significantly, the assembled photodetector is highly sensitive to a polarized infrared light signal with a decent polarization sensitivity of 4.4. More importantly, an outstanding LWIR imaging capability based on the PdSe2/CdTe vdW heterojunction at nonrefrigeration condition is demonstrated. Our work paves a novel route for the design of highly polarization-sensitive, room-temperature infrared photodetectors.

