Related Experiment Video
Updated: Oct 22, 2025
14:58
Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
15.0K
A Resonantly Driven, Electroluminescent Metal Oxide Semiconductor Capacitor with High Power Efficiency
Vivian Wang1,2, Ali Javey1,2
1Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, California 94720, United States.
ACS Nano
|August 26, 2021
Summary
This study demonstrates low-voltage electroluminescent devices using reactive components for voltage gain. High power efficiencies were achieved with thermally activated delayed fluorescence emitters, enabling simplified device structures.
Area of Science:
- Materials Science
- Electrical Engineering
- Optoelectronics
Background:
- Electroluminescence (EL) devices offer versatile light emission but often suffer from low external efficiencies and high operating voltages.
- Existing alternating current (AC) driving schemes raise questions about achievable efficiencies due to non-simultaneous bipolar charge injection.
Purpose of the Study:
- To investigate methods for improving the efficiency and reducing the operating voltage of generic electroluminescent devices.
- To explore the potential of AC driving schemes with passive voltage gain for enhanced performance.
Main Methods:
- Integration of reactive electrical components to achieve passive voltage gain across the device structure.
- Utilizing a metal oxide semiconductor capacitor structure with emissive materials deposited via thermal evaporation.
- Employing thermally activated delayed fluorescence (TADF) emitters.
Main Results:
- Achieved operation at input voltages below 1 V across various gate oxide thicknesses due to passive voltage gain.
- Observed high power efficiencies using TADF emitters deposited in a single thermal evaporation step.
- Demonstrated that simplified electroluminescent device structures can achieve high efficiency.
Conclusions:
- Reactive components can effectively lower operating voltages for electroluminescent devices.
- Simplified device fabrication and AC driving schemes are viable for high-efficiency light emission.
Related Concept Videos
01:25MOS Capacitor
1.1K
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
1.1K
01:22MOSFET: Enhancement Mode
531
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
531
01:16MOSFET
700
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
In an n-MOSFET, the structure includes n-type source and drain...
700
01:12Energy Stored in a Capacitor
4.0K
When an archer pulls the string in a bow, he saves the work done in the form of elastic potential energy. When he releases the string, the potential energy is released as kinetic energy of the arrow. A capacitor works on the same principle in which the work done is saved as electric potential energy. The potential energy (UC) could be calculated by measuring the work done (W) to charge the capacitor.
4.0K
01:18Capacitor With A Dielectric
4.4K
Parallel plate capacitors consist of two conducting plates separated by a certain distance. However, it is mechanically difficult to hold the large plates parallel to each other without actual contact. Hence, a dielectric layer is commonly placed between the plates, which provides an easy solution for holding the plates together with a small gap and increases the capacitance of the capacitor.
Dielectrics are non-conducting materials with no free or loosely bound electrons. When a dielectric is...
Dielectrics are non-conducting materials with no free or loosely bound electrons. When a dielectric is...
4.4K
01:10Energy Stored in Capacitors
755
A parallel plate capacitor, when connected to a battery, develops a potential difference across its plates. This potential difference is key to the operation of the capacitor, as it determines how much electrical energy the capacitor can store.
By integrating the equation that relates voltage and current in a capacitor, one can derive an equation for the voltage across the capacitor at any given time. This equation is crucial in understanding and predicting the behavior of capacitors in...
By integrating the equation that relates voltage and current in a capacitor, one can derive an equation for the voltage across the capacitor at any given time. This equation is crucial in understanding and predicting the behavior of capacitors in...
755