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Published on: June 25, 2020
Compositionally graded AlGaN hole source layer for deep-ultraviolet nanowire light-emitting diode without electron
Muhammad Nawaz Sharif1, Muhammad Usman2, Mussaab Ibrahim Niass1
1National Center for International Joint Research of Electronic Materials and Systems, International Joint-Laboratory of Electronic Materials and Systems of Henan Province, and Henan Key Laboratory of Laser and Opto-electric Information Technology, School of Information Engineering, Zhengzhou University, Zhengzhou, Henan 450001, People's Republic of China.
This study introduces a novel deep-ultraviolet nanowire LED without an electron blocking layer, utilizing a graded hole source layer instead. This design enhances electron blocking and hole injection, boosting optical power and efficiency.
Area of Science:
- Optoelectronics
- Materials Science
- Semiconductor Devices
Background:
- Electron blocking layers (EBLs) are crucial in AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs) for preventing electron overflow.
- EBLs can also impede efficient hole injection into the active region, limiting device performance.
Purpose of the Study:
- To propose and investigate a DUV nanowire (NW) LED structure that eliminates the need for an EBL.
- To enhance electron blocking and hole injection efficiency by replacing the EBL with a compositionally continuous graded hole source layer (HSL).
Main Methods:
- Fabrication of a DUV NW LED structure incorporating a graded HSL.
- Experimental characterization of the proposed device, focusing on electrical and optical properties.
- Comparative analysis of device performance with and without a traditional EBL.
Main Results:
- The proposed graded HSL without EBL demonstrated superior electron blocking and enhanced hole injection efficiency.
- Optical power increased by 48%, and series resistance decreased by 50%, with a 4.8 V threshold voltage.
- Reduced electric field in the active region led to a 34% enhancement in spontaneous emission at 254 nm, achieving 52% maximum internal quantum efficiency.
Conclusions:
- Replacing the EBL with a graded HSL is an effective strategy for improving DUV-LED performance.
- The novel structure offers significant advantages in optical power, efficiency, and reduced resistance.
- This approach paves the way for more efficient and powerful DUV light sources.
