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Updated: Oct 22, 2025

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Reliable Fabrication of Graphene Nanostructure Based on e-Beam Irradiation of PMMA/Copper Composite Structure
Kaixi Bi1, Jiliang Mu1, Wenping Geng1
1Key Laboratory of National Defense Science and Technology on Electronic Measurement, School of Instrument and Electronics, North University of China, Taiyuan 030051, China.
Abstract:
Graphene nanostructures are widely perceived as a promising material for fundamental components; their high-performance electronic properties offer the potential for the construction of graphene nanoelectronics. Numerous researchers have paid attention to the fabrication of graphene nanostructures, based on both top-down and bottom-up approaches. However, there are still some unavoidable challenges, such as smooth edges, uniform films without folds, and accurate dimension and location control. In this work, a direct writing method was reported for the in-situ preparation of a high-resolution graphene nanostructure of controllable size (the minimum feature size is about 15 nm), which combines the advantages of e-beam lithography and copper-catalyzed growth. By using the Fourier infrared absorption test, we found that the hydrogen and oxygen elements were disappearing due to knock-on displacement and the radiolysis effect. The graphene crystal is also formed via diffusion and the local heating effect between the e-beam and copper substrate, based on the Raman spectra test. This simple process for the in-situ synthesis of graphene nanostructures has many promising potential applications, including offering a way to make nanoelectrodes, NEMS cantilever resonant structures, nanophotonic devices and so on.

