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Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope
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Quantum Oscillations in Ferromagnetic (Sb, V)2 Te3 Topological Insulator Thin Films
Liguo Zhang1, Toni Helm2, Haicheng Lin1
1Max-Planck Institute for Chemical Physics of Solids, Nöthnitzer Str. 40, 01187, Dresden, Germany.
Advanced Materials (Deerfield Beach, Fla.)
|August 31, 2021
Summary
Vanadium doping in antimony telluride thin films creates ferromagnetism, enabling manipulation of 2D surface states for quantum anomalous Hall effect applications.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Quantum Technologies
Background:
- Topological insulators possess unique surface states with potential for quantum applications.
- Quantum anomalous Hall effect (QAHE) offers a dissipationless charge transport pathway.
Purpose of the Study:
- Investigate the effect of vanadium doping on the electronic band structure of Sb2-xVxTe3 thin films.
- Explore the potential for manipulating 2D surface states for QAHE.
Main Methods:
- Thin films of Sb2-xVxTe3 (0 ≤ x ≤ 0.102) were synthesized using molecular beam epitaxy.
- Electrical transport measurements, including Shubnikov-de Haas (SdH) oscillations, were performed.
- Angle-dependent SdH oscillations were analyzed to confirm the 2D nature of surface states.
Main Results:
- Vanadium doping induced long-range ferromagnetic order in Sb2-xVxTe3 thin films.
- Enhanced SdH oscillation amplitudes were observed, indicating modified electronic properties.
- Angle-dependent SdH oscillations confirmed the topological surface state origin.
- Band structure modification was achieved through controlled vanadium doping.
Conclusions:
- Vanadium doping effectively tunes the electronic band structure and induces ferromagnetism in topological insulator thin films.
- Sb2-xVxTe3 thin films provide a promising platform for energy band engineering.
- Manipulation of topological quantum states offers a new route towards quantum anomalous Hall effect devices for spintronics and quantum electronics.
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