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Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
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Publisher's Note: "Precise, subnanosecond, and high-voltage switching enabled by gallium nitride electronics

John W Simonaitis1, Benjamin Slayton2, Yugu Yang-Keathley2

  • 1Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA.

The Review of Scientific Instruments
|September 2, 2021
PubMed
Abstract

No abstract available in PubMed .

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