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High-Contrast Plasmonic-Enhanced Shallow Spin Defects in Hexagonal Boron Nitride for Quantum Sensing
Xingyu Gao1, Boyang Jiang2, Andres E Llacsahuanga Allcca1
1Department of Physics and Astronomy, Purdue University, West Lafayette, Indiana 47907, United States.
Nano Letters
|September 2, 2021
Summary
Researchers enhanced spin defects in hexagonal boron nitride (hBN) for quantum sensing. A gold film waveguide significantly boosted photoluminescence and optically detected magnetic resonance (ODMR) contrast, improving sensitivity.
Area of Science:
- Quantum Sensing
- Materials Science
- Nanotechnology
Background:
- Spin defects in hexagonal boron nitride (hBN) show promise for quantum sensing applications.
- Current limitations include low photoluminescence and optically detected magnetic resonance (ODMR) contrast, hindering sensitivity.
Purpose of the Study:
- To enhance the photoluminescence and ODMR contrast of hBN spin defects.
- To improve the sensitivity of hBN spin defects for magnetic field detection.
Main Methods:
- Utilized shallow boron vacancy spin defects in hBN nanosheets created via low-energy He+ ion implantation.
- Fabricated a gold film microwave waveguide using photolithography to enhance defect properties.
- Investigated the impact of microwave and laser power on ODMR performance.
Main Results:
- Achieved a record-high ODMR contrast of 46% at room temperature.
- Enhanced photoluminescence of hBN spin defects by up to 17-fold.
- Demonstrated improved sensitivity for magnetic field detection.
Conclusions:
- Surface plasmon enhancement using a gold film waveguide significantly boosts hBN spin defect performance.
- These findings underscore the potential of hBN spin defects for advanced nanoscale quantum sensing applications.
