Unravelling the complex formation mechanism of HfO₂ nanocrystals using in situ pair distribution function analysis

Hafnia, HfO₂, which is a wide band gap semiconducting oxide, is much less studied than the chemically similar zirconia (ZrO₂). Here, we study the formation of hafnia nanocrystals from hafnium tetrachloride in methanol under solvothermal conditions (248 bar, 225-450 °C) using complementary in situ powder X-ray diffraction (PXRD) and Pair Distribution Function (PDF) analysis. The main structural motif of the precursor solution (HfCl₄ dissolved in methanol) is a Hf oxide trimer with very similar local structure to that of m-HfO₂. Different measurements on precursor solutions show large intensity variation for the Hf-Cl correlations signifying different extents of HCl elimation. A few seconds of heating lead to a correlation appearing at 3.9 Å corresponding to corner-sharing Hf-polyhedra in a disordered solid matrix. During the next minutes (depending on temperature) the disordered structure rearranges and the nearest neighbour Hf-Hf distance contracts while the Hf-O coordination number increases. After approximately 90 seconds (at T = 250 °C) the structural rearrangement terminates and 1-2 nm nanocrystals of m-HfO₂ nucleate. Initially the m-HfO₂ nanocrystals have significant disorder as reflected in large Hf atomic displacement parameter (ADP) values, but as the nanocrystals grow to 5-6 nm in size during extended heating, the Hf ADPs decrease toward the values obtained for ordered bulk structures. The nanocrystal growth is not well modelled by the Johnson-Mehl-Avrami expression reflecting that multiple complex chemical processes occur during this highly nonclassical nanocrystal formation under solvothermal conditions.