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Related Experiment Video

Updated: Jun 16, 2026

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Published on: November 28, 2017

Atomic layer deposited Al₂O₃passivation layer for few-layer WS₂field effect transistors.

Young Gyu You¹, Dong Ho Shin¹, Jong Hwa Ryu¹

¹Department of Physics, Konkuk University, Seoul 05029, Republic of Korea.

|September 3, 2021

Summary

This summary is machine-generated.

Adding an aluminum oxide (Al2O3) passivation layer improves the performance and stability of few-layer tungsten disulfide field-effect transistors (WS2 FETs). This layer enhances carrier mobility and reduces Schottky barriers, leading to more reliable devices.

Keywords:

Al2O3 Schottky Barrier WS2 ambient stability field effect transistor passivations

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Published on: May 24, 2020

Area of Science:

Materials Science
Nanoscience
Solid State Physics

Background:

Few-layer tungsten disulfide field-effect transistors (WS2 FETs) performance is often limited by charged impurities and Schottky barriers.
These limitations lead to decreased carrier mobility and hinder device efficiency.

Purpose of the Study:

To investigate the impact of an aluminum oxide (Al2O3) passivation layer on WS2 FET performance.
To understand the mechanisms behind performance enhancement and stability improvement.

Main Methods:

Fabrication of few-layer WS2 FETs.
Atomic layer deposition (ALD) of an Al2O3 overlayer.
Electrical characterization of WS2 FETs before and after Al2O3 deposition.
Analysis of carrier mobility, Schottky barrier height, and device stability.

Main Results:

Al2O3 passivation suppressed charged impurity effects via high-κ dielectric screening.
The Al2O3 layer reduced the effective Schottky barrier height, attributed to n-doping from positive fixed charges at the Al2O3/WS2 interface.
WS2 FETs with Al2O3 passivation exhibited enhanced and stable electrical performance over 57 days, resisting oxidation.

Conclusions:

ALD of Al2O3 is an effective method to enhance the performance of few-layer WS2 FETs.
The Al2O3 passivation layer significantly improves device stability and ambient resistance.
This approach offers a facile route to high-performance and stable WS2-based electronic devices.