Related Experiment Video
Updated: Oct 20, 2025

Probing the Structure and Dynamics of Interfacial Water with Scanning Tunneling Microscopy and Spectroscopy
Published on: May 27, 2018
Angstrom-Resolved Interfacial Structure in Buried Organic-Inorganic Junctions
Craig P Schwartz1, Sumana L Raj2, Sasawat Jamnuch3
1Chemical Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA.
This study reports the first soft x-ray second harmonic generation (SXR SHG) spectrum of a buried boron-Parylene N interface. SXR SHG offers exceptional sensitivity for probing interfacial charge transport, revealing details beyond traditional x-ray absorption.
Area of Science:
- Materials Science
- Surface Science
- Spectroscopy
Background:
- Charge transport at interfaces is critical for many physical and chemical processes.
- Understanding buried interfaces is challenging due to limited surface sensitivity of conventional techniques.
Purpose of the Study:
- To report the first soft x-ray second harmonic generation (SXR SHG) spectrum of a buried boron-Parylene N interface.
- To demonstrate the high interfacial sensitivity of SXR SHG for buried interfaces.
Main Methods:
- Soft x-ray second harmonic generation (SXR SHG) spectroscopy.
- Electronic structure calculations.
Main Results:
- SXR SHG spectra exhibit distinct features not present in x-ray absorption spectra.
- Extraordinary interfacial sensitivity of SXR SHG was demonstrated.
- Electronic structure calculations determined a boron-organic separation distance of 1.9 Å.
- Small changes (<1 Å) in separation distance lead to detectable SXR SHG spectral shifts (hundreds of meV).
Conclusions:
- SXR SHG is a powerful, highly sensitive probe for buried interfaces.
- The technique can resolve subtle structural changes at interfaces.
- This method opens new avenues for characterizing interfacial phenomena in complex systems.
More Related Videos
Related Concept Videos
Interfacial Electrochemical Methods: Overview
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Aromatic Hydrocarbon Cations: Structural Overview
Removing one hydrogen from the intervening CH2 group...
Aromatic Hydrocarbon Anions: Structural Overview
Due to the absence of continuous...
Resonance and Hybrid Structures
Resonance Structures and Resonance Hybrids
The Lewis structure of a nitrite anion (NO2−) may actually be drawn in two different ways, distinguished by the locations of the N–O and N=O bonds.

