Construction 0D/2D heterojunction by highly dispersed Ag2S quantum dots (QDs) loaded on the g-C3N4 nanosheets for

Ziyi You1, Xiaoyang Yue2, Dainan Zhang2

  • 1State Key Laboratory of Electronic Thin Film and Integrated Devices, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, PR China; Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313001, PR China.

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