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Optically induced Kondo effect in semiconductor quantum wells.

I V Iorsh1,2, O V Kibis2

  • 1Department of Physics and Engineering, ITMO University, Saint-Petersburg, 197101, Russia.

Journal of Physics. Condensed Matter : an Institute of Physics Journal
|September 21, 2021
PubMed
Summary
This summary is machine-generated.

Circularly polarized light can theoretically create localized electron states in 2D systems, leading to the Kondo effect through antiferromagnetic interactions with conduction electrons. Experimental conditions for this phenomenon in semiconductor quantum wells are explored.

Keywords:
Floquet systemsKondo effectquantum wells

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Area of Science:

  • Condensed Matter Physics
  • Quantum Mechanics
  • Materials Science

Background:

  • Two-dimensional electron systems (2DES) exhibit unique quantum phenomena.
  • The Kondo effect is a crucial many-body phenomenon in condensed matter physics.
  • Controlling electron interactions in quantum systems is key for novel electronic devices.

Purpose of the Study:

  • To theoretically investigate the induction of localized electron states via circularly polarized light in 2DES.
  • To explore the antiferromagnetic interaction between these induced states and conduction electrons.
  • To identify experimental conditions for observing the Kondo effect in semiconductor quantum wells.

Main Methods:

  • Theoretical modeling of electron systems under irradiation.
  • Quantum mechanical calculations of electron-electron interactions.
  • Analysis of magnetic ordering and Kondo resonance conditions.

Main Results:

  • Demonstration that circularly polarized irradiation can induce localized electron states.
  • Confirmation of antiferromagnetic coupling between induced localized states and conduction electrons.
  • Theoretical prediction of the resultant Kondo effect.

Conclusions:

  • Circularly polarized light offers a novel pathway to engineer electron interactions in 2DES.
  • The induced localized states can mediate the Kondo effect.
  • Specific experimental parameters for semiconductor quantum wells are outlined for potential observation.