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Updated: Oct 19, 2025

Residue-Free Fabrication of van der Waals Heterostructures of Two-Dimensional Materials
Published on: July 18, 2025
Identifying the Intermediate Free-Carrier Dynamics Across the Charge Separation in Monolayer MoS2/ReSe2
Jin Yang1,2, Shaolong Jiang3, Jiafeng Xie4
1Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei 230031, China.
Abstract:
Van der Waals heterostructures composed of different two-dimensional films offer a unique platform for engineering and promoting photoelectric performances, which highly demands the understanding of photocarrier dynamics. Herein, large-scale vertically stacked heterostructures with MoS2 and ReSe2 monolayers are fabricated. Correspondingly, the carrier dynamics have been thoroughly investigated using different ultrafast spectroscopies, including Terahertz (THz) emission spectroscopy, time-resolved THz spectroscopy (TRTS), and near-infrared optical pump-probe spectroscopy (OPPS), providing complementary dynamic information for the out-of-plane charge separation and in-plane charge transport at different stages. The initial charge transfer (CT) within the first 170 fs, generating a transient directional current, is directly demonstrated by the THz emissions. Furthermore, the TRTS explicitly unveils an intermediate free-carrier relaxation pathway, featuring a pronounced augmentation of THz photoconductivity compared to the isolated ReSe2 layer, which likely contains the evolution from immigrant hot charged free carriers to bounded interlayer excitons (∼0.7 ps) and the surface defect trapping (∼13 ps). In addition, the OPPS reveals a distinct enhancement in the saturable absorption along with long-lived dynamics (∼365 ps), which originated from the CT and interlayer exciton recombination. Our work provides comprehensive insight into the photocarrier dynamics across the charge separation and will help with the development of optoelectronic devices based on ReSe2-MoS2 heterostructures.
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