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Related Concept Videos

Semiconductors01:22

Semiconductors

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There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
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Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station
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A monolithic InP/SOI platform for integrated photonics.

Zhao Yan1, Yu Han1, Liying Lin1

  • 1Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China.

Light, Science & Applications
|September 27, 2021
PubMed
Summary
This summary is machine-generated.

A new monolithic Indium Phosphide on Silicon-on-Insulator (InP/SOI) platform integrates the strengths of InP and Si photonics. This innovation enables efficient light interfacing for advanced photonic integrated circuits (PICs).

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Area of Science:

  • Materials Science
  • Photonics
  • Semiconductor Device Physics

Background:

  • Photonic integrated circuits (PICs) require scalable, high-throughput, cost-effective, and power-efficient integration platforms.
  • Existing Silicon (Si) photonics and Indium Phosphide (InP) photonics platforms have complementary strengths but lack seamless integration.
  • The need for a unified platform to leverage the benefits of both Si and InP technologies is critical for advancing integrated photonics.

Purpose of the Study:

  • To present a novel monolithic InP on SOI platform that synergizes the advantages of Si and InP photonics.
  • To demonstrate the feasibility of selective InP growth on industry-standard SOI wafers for advanced PICs.
  • To showcase the potential of this integrated platform for realizing diverse photonic functionalities.

Main Methods:

  • Developed a monolithic InP/SOI platform via selective epitaxial growth of InP sub-micron wires and membranes on (001)-oriented SOI wafers.
  • Achieved in-plane, dislocation-free, and site-controlled epitaxial InP positioned directly on the buried oxide layer ('InP-on-insulator').
  • Integrated III-V devices with Si-based waveguides, ensuring efficient light interfacing.

Main Results:

  • Successfully fabricated a monolithic InP/SOI platform with intimate integration of InP and Si device layers.
  • Demonstrated efficient light coupling between epitaxial InP and Si-based waveguides.
  • Exemplified the platform's capability by fabricating lasers with various cavity designs (subwavelength wires, square cavities, micro-disks).

Conclusions:

  • The monolithic InP/SOI platform offers a promising solution for advanced PICs by combining the strengths of Si and InP photonics.
  • The 'InP-on-insulator' approach facilitates efficient light interfacing and enables diverse photonic functionalities.
  • This work represents a significant advancement towards the realization of fully-integrated, Si-based PICs.