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Published on: February 23, 2017
Weak polarization electric field Ⅲ-N LEDs on polar plane with enhanced efficiency and strong lateral carrier
Jingkai Zhao1, Changcai Zuo1, Lidong Zhang1
1State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun, 130012, China.
Abstract:
Weak polarization electric field (PEF) III-nitride LEDs provide a promising pathway toward high-performance micro-LEDs for next-generation displays and wearable devices. To realize this promise, improving the efficiency of weak-PEF LEDs is crucial, as it remains the central requirement for next-generation optoelectronic applications. Here, we demonstrate record-high efficiency weak-PEF LEDs on polar c-plane with InGaN/AlGaN digital alloy (DA) superlattice barriers, enabled by optimized pulse-growth mode of metal-organic chemical vapor deposition (MOCVD). In addition, we reveal strong lateral carrier confinement in these LEDs. We improve the structural quality and optical performance of weak-PEF InGaN/DA multiple quantum wells (MQWs) by optimizing the pulse-growth conditions. Further, we realize weak-PEF DA-based blue LEDs with peak external quantum efficiency up to 15%, which is the highest value in current studies of its kind. Importantly, weak-PEF DA-based LEDs have strong lateral carrier confinement, leading to less efficiency degradation from sidewall effects than conventional GaN-based MQWs LEDs. This work represents a meaningful step toward high-performance weak-PEF III-nitride LEDs, particularly for micro-LED applications where both efficiency and carrier confinement are critical.
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