Related Experiment Video
Updated: Oct 18, 2025

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
Published on: August 2, 2019
Possible Routes to Obtain Enhanced Magnetoresistance in a Driven Quantum Heterostructure with a Quasi-Periodic Spacer
Arpita Koley1, Santanu K Maiti1, Laura M Pérez2
1Physics and Applied Mathematics Unit, Indian Statistical Institute, 203 Barrackpore Trunk Road, Kolkata 700 108, India.
Abstract:
In this work, we perform a numerical study of magnetoresistance in a one-dimensional quantum heterostructure, where the change in electrical resistance is measured between parallel and antiparallel configurations of magnetic layers. This layered structure also incorporates a non-magnetic spacer, subjected to quasi-periodic potentials, which is centrally clamped between two ferromagnetic layers. The efficiency of the magnetoresistance is further tuned by injecting unpolarized light on top of the two sided magnetic layers. Modulating the characteristic properties of different layers, the value of magnetoresistance can be enhanced significantly. The site energies of the spacer is modified through the well-known Aubry-André and Harper (AAH) potential, and the hopping parameter of magnetic layers is renormalized due to light irradiation. We describe the Hamiltonian of the layered structure within a tight-binding (TB) framework and investigate the transport properties through this nanojunction following Green's function formalism. The Floquet-Bloch (FB) anstaz within the minimal coupling scheme is introduced to incorporate the effect of light irradiation in TB Hamiltonian. Several interesting features of magnetotransport properties are represented considering the interplay between cosine modulated site energies of the central region and the hopping integral of the magnetic regions that are subjected to light irradiation. Finally, the effect of temperature on magnetoresistance is also investigated to make the model more realistic and suitable for device designing. Our analysis is purely a numerical one, and it leads to some fundamental prescriptions of obtaining enhanced magnetoresistance in multilayered systems.
Related Concept Videos
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

