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Creating Quantum Emitters in Hexagonal Boron Nitride Deterministically on Chip-Compatible Substrates.

Xiaohui Xu1, Zachariah O Martin2, Demid Sychev2

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Summary

Researchers developed a lithography-free method using atomic force microscopy (AFM) nanoindentation to deterministically create single-photon emitters (SPEs) in hexagonal boron nitride (hBN) for quantum applications.

Keywords:
atomic force microscopyhBNnanoindentationon-chip integrationsingle-photon emitters

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Area of Science:

  • Quantum Information Science
  • Materials Science
  • Nanotechnology

Background:

  • Two-dimensional hexagonal boron nitride (hBN) is a promising material for quantum information applications due to its room-temperature single-photon emitters (SPEs).
  • On-demand, position-controlled generation of hBN SPEs is crucial for practical applications.
  • Existing methods for deterministic SPE creation in hBN are incompatible with integrated photonics or risk material damage.

Purpose of the Study:

  • To develop a deterministic, radiation- and lithography-free method for creating hBN SPEs.
  • To enable the integration of hBN SPEs into on-chip photonic devices.

Main Methods:

  • Utilized atomic force microscopy (AFM) for nanoindentation on hBN flakes.
  • Applied the method to hBN flakes on silicon dioxide-silicon substrates.
  • Investigated SPE yields for various indent sizes.

Main Results:

  • Achieved deterministic activation of hBN SPEs using AFM nanoindentation.
  • Demonstrated SPE yields exceeding 30% across multiple indent sizes.
  • Obtained a maximum SPE yield of 36% for indents around 400 nm.

Conclusions:

  • AFM nanoindentation offers a viable, damage-free route for deterministic hBN SPE creation.
  • The method is compatible with substrates suitable for on-chip photonic integration.
  • This work advances the integration of hBN SPEs with photonic and plasmonic devices.