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Updated: Oct 18, 2025
Atomically Defined Templates for Epitaxial Growth of Complex Oxide Thin Films
Published on: December 4, 2014
Amorphous AlN films grown by ALD from trimethylaluminum and monomethylhydrazine
Roman G Parkhomenko1, Oreste De Luca2, Łukasz Kołodziejczyk3
1CIC NanoGUNE, Tolosa Hiribidea 76, E-20018 San Sebastian, Spain. r.parkhomenko@nanogune.eu.
Abstract:
The great interest in aluminium nitride thin films has been attributed to their excellent dielectric, thermal and mechanical properties. Here we present the results of amorphous AlN films obtained by atomic layer deposition. We used trimethylaluminum and monomethylhydrazine as the precursors at a deposition temperature of 375-475 °C. The structural and mechanical properties and chemical composition of the synthesized films were investigated in detail by X-ray diffraction, X-ray photoelectron spectroscopy, electron and probe microscopy and nanoindentation. The obtained films were compact and continuous, exhibiting amorphous nature with homogeneous in-depth composition, at an oxygen content of as low as 4 at%. The mechanical properties were comparable to those of AlN films produced by other techniques.
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