Photoisomerization Kinetics of Photoswitchable Thin Films Based on Nanostructure/Molecular Layers of AlN-AO7

The photoisomerization kinetics of photoswitchable thin films based on nanostructure/molecular layers of AlN-AO7 have been studied, investigated and reported. The trans → cis isomerization process occurs by UV-light irradiation. The cis-isomer could be turned back to the trans-isomer by either thermal or optical relaxation. The kinetics and time-evolution of the photoisomerization and reverse isomerization mechanism of AlN-AO7 thin films are investigated by UV-Vis absorbance spectra using relevant models. All phases of AlN-AO7 thin film, initial trans-, cis-, optical trans-, thermal trans-phases, were investigated using UV-Vis absorbance spectra, FTIR spectra, XRD and SEM. Transforming AlN-AO7 thin film from the initial trans-phase into cis-phase leads to curvature in the AO7 leaves and increases in the strain inside the structure. Going back to the trans-phase by either optical or thermal relaxation leads to vanishing the curvature and decreasing the structure's strain. Finally, the energy storage capacity was calculated using DSC and was found to be 36.38 J g^-1 , simultaneously realizing the multisource solar energy storage and environmental heat.