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Polymer transfer technique for strain-activated emission in hexagonal boron nitride.
Optics Express
|October 7, 2021
Summary
We developed a new hexagonal boron nitride (hBN) transfer method. This technique enables localized emission from strained hBN, crucial for scalable single photon emitter arrays.
Area of Science:
- Materials Science
- Nanotechnology
- Quantum Optics
Background:
- Hexagonal boron nitride (hBN) is a promising material for quantum applications.
- Scalable fabrication of high-quality hBN films is essential for single photon emitter arrays.
Purpose of the Study:
- To present a polymer-assisted transfer technique for hexagonal boron nitride (hBN).
- To demonstrate localized optical emission from strained hBN films.
- To investigate the factors influencing emission brightness in hBN films.
Main Methods:
- Developed a polymer-assisted transfer process for hBN films.
- Draped hBN films over prepatterned substrates with specific features.
- Analyzed the spatial distribution and brightness of light emission from the hBN films.
Main Results:
- Successfully transferred hBN films using the polymer-assisted technique.
- Demonstrated localized emission from strained regions of hBN draped over substrate features.
- Showed that the brightest emission originates from substrate features, not film wrinkles.
Conclusions:
- The developed hBN transfer technique is effective for creating localized emission.
- Emission localization to substrate features is key for controlling brightness.
- Results contribute to the scalability of single photon emitter arrays using hBN.
