Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Schottky Barrier Diode01:27

Schottky Barrier Diode

557
Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
557
Biasing of P-N Junction01:16

Biasing of P-N Junction

1.1K
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
1.1K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Silicon-photonics transmitter using ultra-wideband quantum-dot comb laser-diode towards 34.132 Tbit/s/fiber.

Optics express·2026
Same author

Optical Windows for Transcranial Brain Imaging in Living Mice: Skull Thinning, Clearing, and Beyond.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)·2026
Same author

Text-Embedding-Assisted Design of Rigid Molecular Cations for Suppressing Ion Migration in Hybrid Single-Crystal X-ray Detectors.

The journal of physical chemistry letters·2026
Same author

Green InGaN LED-based quantum random number generation compatible with silicon avalanche photodiodes.

Optics express·2026
Same author

Suppression of Interface Traps and Improved Breakdown in Recessed-Gate AlGaN/GaN MISHEMTs Using Low-Temperature Nitrogen Passivation.

ACS omega·2026
Same author

Enhanced Selectivity of Hydrogen Sulfide Gas by Hybrid Zeolitic Imidazolate Framework-67/2D Platinum Diselenide-Based Sensors Toward Wafer-Scale Production.

Small (Weinheim an der Bergstrasse, Germany)·2026
Same journal

Denoising algorithm of Φ-OTDR systems based on adaptive fractional wavelet transform denoising.

Optics express·2026
Same journal

Millisecond photon-to-photon latency and high-speed volumetric projection system for optogenetics.

Optics express·2026
Same journal

Polarization-encoded coaxial structured light for high-precision 3D surface profilometry.

Optics express·2026
Same journal

Discrete freeform optical design based on collaborative optimization of point cloud and local normals.

Optics express·2026
Same journal

Ultrafast ghost imaging with 25 GHz speckle switching and wavelength-division multiplexing.

Optics express·2026
Same journal

Atomic vapor cells fabricated by femtosecond laser welding of standard-optical-quality glass.

Optics express·2026
See all related articles

Related Experiment Video

Updated: Oct 17, 2025

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
11:14

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Published on: May 28, 2016

14.0K

Exploring superlattice DBR effect on a micro-LED as an electron blocking layer.

Gewei Yan, Byung-Ryool Hyun, Fulong Jiang

    Optics Express
    |October 7, 2021
    PubMed
    Summary
    This summary is machine-generated.

    A novel superlattice distributed Bragg reflector (SL DBR) enhances GaN micro-light-emitting diodes (micro-LEDs). This SL DBR improves wall-plug efficiency (WPE) by optimizing carrier injection and light extraction.

    More Related Videos

    Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices
    11:24

    Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices

    Published on: July 11, 2025

    8.3K
    Enhanced Electron Injection and Exciton Confinement for Pure Blue Quantum-Dot Light-Emitting Diodes by Introducing Partially Oxidized Aluminum Cathode
    10:41

    Enhanced Electron Injection and Exciton Confinement for Pure Blue Quantum-Dot Light-Emitting Diodes by Introducing Partially Oxidized Aluminum Cathode

    Published on: May 31, 2018

    8.9K

    Related Experiment Videos

    Last Updated: Oct 17, 2025

    Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
    11:14

    Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

    Published on: May 28, 2016

    14.0K
    Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices
    11:24

    Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices

    Published on: July 11, 2025

    8.3K
    Enhanced Electron Injection and Exciton Confinement for Pure Blue Quantum-Dot Light-Emitting Diodes by Introducing Partially Oxidized Aluminum Cathode
    10:41

    Enhanced Electron Injection and Exciton Confinement for Pure Blue Quantum-Dot Light-Emitting Diodes by Introducing Partially Oxidized Aluminum Cathode

    Published on: May 31, 2018

    8.9K

    Area of Science:

    • Optoelectronics
    • Materials Science
    • Semiconductor Devices

    Background:

    • Gallium Nitride (GaN) micro-light-emitting diodes (micro-LEDs) are crucial for advanced display and lighting technologies.
    • Electron blocking layers (EBLs) are essential for improving micro-LED performance by confining carriers.
    • Conventional EBLs can suffer from polarization effects and suboptimal carrier injection, limiting device efficiency.

    Purpose of the Study:

    • To numerically investigate the efficacy of a superlattice distributed Bragg reflector (SL DBR) as a p-type electron blocking layer (EBL) in GaN micro-LEDs.
    • To enhance the wall-plug efficiency (WPE) of GaN micro-LEDs through improved device architecture.
    • To analyze the impact of the SL DBR on carrier injection, light extraction, and operational voltage.

    Main Methods:

    • Numerical simulations were employed to model the performance of GaN micro-LEDs incorporating an AlGaN/GaN superlattice DBR as the EBL.
    • The study varied the number of DBR pairs to assess its effect on device characteristics.
    • Key performance metrics including reflectivity, light extraction efficiency (LEE), internal quantum efficiency (IQE), and operational voltage were evaluated.

    Main Results:

    • Increasing the number of DBR pairs in the SL DBR enhanced p-region reflectivity and LEE.
    • The AlGaN/GaN superlattice EBL effectively reduced polarization effects and promoted hole injection, leading to balanced carrier injection and higher IQE.
    • Replacing the conventional high refractive-index layer with the superlattice resulted in a conductive DBR, lowering the operation voltage.

    Conclusions:

    • The superlattice distributed Bragg reflector serves as an effective p-type electron blocking layer in GaN micro-LEDs.
    • The SL DBR design significantly improves internal quantum efficiency and light extraction efficiency.
    • This optimized structure leads to a substantial 22.9% enhancement in wall-plug efficiency compared to devices with conventional EBLs.