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On-chip optical interconnection using integrated germanium light emitters and photodetectors
Optics Express
|October 7, 2021
Summary
Researchers developed integrated germanium light-emitting diodes (LEDs) and photodiodes (PDs) for high-density current injection and low dark current. This enables on-chip optical interconnections using silicon waveguides.
Area of Science:
- Materials Science
- Optoelectronics
- Nanotechnology
Background:
- Germanium (Ge) is a promising material for optoelectronic devices.
- Integrating Ge light sources and photodetectors is challenging due to differing optimal device structures.
Purpose of the Study:
- To develop a monolithically integrated Ge light-emitting diode (LED) and Ge photodiode (PD).
- To create an on-chip optical interconnection system using Ge LED, Ge PD, and Si waveguide.
Main Methods:
- Fabrication of a monolithic Ge LED enabling high-density current injection.
- Fabrication of a Ge PD with low dark current.
- Integration of Ge LED, Ge PD, and Si waveguide for on-chip optical interconnection.
Main Results:
- Successful fabrication of a monolithically integrated Ge LED and PD.
- Demonstration of an on-chip optical interconnection system.
- Characterization of the fabricated Ge LED and PD properties.
Conclusions:
- The developed integrated Ge LED and PD system facilitates on-chip optical interconnections.
- This technology addresses the integration challenges of Ge-based optoelectronics.
