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Nano-magnetic tunnel junctions controlled by electric field for straintronics

Peisen Li1, Xinping Yao1, Yueguo Hu1

  • 1College of Intelligence Science and Technology, National University of Defense Technology, Changsha 410073, China. huyueguo1991@163.com.

Nanoscale
|October 11, 2021
PubMed
Summary

Electric fields can control magnetic tunneling junctions (MTJs) for energy-efficient nonvolatile RAM. This study demonstrates electric field control of resistance and magnetic switching pathways in nanoscale MTJs, advancing the field of straintronics.

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