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Low-temperature topotactic oxidation using the solid-state oxidant Zr-doped CeO2.
Masanagi Abe1, Hideyuki Kawasoko1, Tomoteru Fukumura1,2
1Department of Chemistry, Graduate School of Science, Tohoku University, Sendai 980-8578, Japan. tomoteru.fukumura.e4@tohoku.ac.jp.
Researchers developed a new topotactic oxidation method using Zr-doped CeO2. This process achieves oxygen intercalation at lower temperatures, enhancing superconductivity in Y2O2Bi materials.
Area of Science:
- Materials Science
- Solid-State Chemistry
- Superconductivity
Background:
- The anti-ThCr2Si2 structure type, exemplified by Y2O2Bi, can exhibit superconductivity through oxygen intercalation.
- Conventional solid-state oxidation for oxygen intercalation in Y2O2Bi requires high temperatures (1000 °C).
- High-temperature processing can lead to the segregation of undesirable impurity phases, hindering optimal material properties.
Purpose of the Study:
- To develop a novel topotactic oxidation method for Y2O2Bi.
- To achieve oxygen intercalation at significantly lower temperatures.
- To enhance the superconducting transition temperature of Y2O2Bi and prevent impurity phase formation.
Main Methods:
- Development of a new topotactic oxidation technique.
- Utilizing zirconium-doped cerium dioxide (Zr-doped CeO2) as a solid-state oxidant.
- Processing Y2O2Bi under specific conditions at 200 °C.
Main Results:
- Successful oxygen intercalation into Y2O2Bi was achieved at a much lower temperature (200 °C).
- The low-temperature topotactic oxidation effectively prevented the segregation of impurity phases.
- The highest superconducting transition temperature reported to date for Y2O2Bi was obtained using this method.
Conclusions:
- The developed topotactic oxidation method offers a more efficient route to intercalate oxygen into Y2O2Bi.
- Lower processing temperatures are beneficial for achieving high-quality superconducting materials by avoiding impurity formation.
- This advancement provides a pathway to optimize the superconducting properties of Y2O2Bi and related materials.
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