221 K Local Photothermal Heating in a Si Plasmonic Waveguide Loaded with a Co Thin Film

Photothermal heaters are important devices for optical switches and memories based on the thermo-optic/magneto-optic effect and phase change materials. We demonstrated photothermal heating in Si plasmonic waveguides loaded with Co thin films by measuring the resistance change upon inputting transverse-magnetic (TM) mode light. Temperature rise is proportional to the light intensity with clear polarization dependence. The photothermal conversion efficiency was estimated at 36 K/mW and maximum temperature rise was estimated at 221 K at steady state upon the inputting 6.3 mW TM mode light for the 400 nm-wide, 8 µm-long and 189 nm-thick Co film deposited on the Si wire waveguide with 129 nm-thick SiO₂ buffer layer. The method to increase the efficiency is discussed based on the experimental and simulation results considering the thickness of the SiO₂ buffer layer, Co layer and Si core layer, waveguide width, and wavelength. Local photothermal heaters in this study can be applied to a variety of fields including optical switches/memories without electrical control signals in photonic integrated circuits, on-chip optical sensors, and a lab-on-a-chip in biology, chemistry, and medicine.