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Author Correction: A doping-less junction-formation mechanism between n-silicon and an atomically thin boron layer
Vahid Mohammadi1, Stoyan Nihtianov2, Changming Fang3
1Department of Microelectronics, Delft University of Technology, 2628 CD, Delft, The Netherlands. V.Mohammadi@tudelft.nl.
Scientific Reports
|October 13, 2021
Summary
No abstract available in PubMed .
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