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Patterning via Optical Saturable Transitions - Fabrication and Characterization
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Fluorescent Labeling to Investigate Nanopatterning Processes in Extreme Ultraviolet Lithography.

Lianjia Wu1, Michiel F Hilbers2, Olivier Lugier1

  • 1Advanced Research Center for Nanolithography, Science Park 106, Amsterdam 1098XG, The Netherlands.

ACS Applied Materials & Interfaces
|October 20, 2021
PubMed
Summary

This study introduces a fluorescent inorganic photoresist for extreme ultraviolet (EUV) lithography. Fluorescent labeling reveals mechanistic insights into the EUV patterning process, aiding future material development.

Keywords:
EUV resistZr−oxo clustercarbazolefluorescence microscopyradiation chemistry

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Photochemistry

Background:

  • Extreme ultraviolet (EUV) lithography is crucial for sub-20 nm semiconductor manufacturing.
  • The precise mechanisms of pattern formation in EUV photoresists remain incompletely understood.
  • Developing advanced photoresists is essential for continued progress in microelectronics fabrication.

Purpose of the Study:

  • To develop an inorganic EUV photoresist with intrinsic fluorescence properties.
  • To investigate the impact of fluorescent carbazole derivatives on the EUV patterning process.
  • To utilize fluorescence spectroscopy for mechanistic insights into resist behavior after EUV exposure.

Main Methods:

  • Synthesis of an inorganic photoresist incorporating carbazole benzoate ligands.
  • Exposure of resist films to extreme ultraviolet (EUV) light.
  • Analysis using fluorescence, UV-visible absorption, and infrared spectroscopy.
  • Characterization via microscopy techniques.

Main Results:

  • The incorporation of carbazole ligands reduced photoresist sensitivity, attributed to hole trapping and steric hindrance.
  • Spectroscopic analysis confirmed that carbazole units remained largely intact post-EUV irradiation, though fluorescence intensity decreased.
  • Fluorescence tracking provided real-time mechanistic insights into the photoresist's response to EUV exposure.

Conclusions:

  • Fluorescent labeling offers a powerful tool for elucidating photoresist patterning mechanisms at potentially molecular resolution.
  • The developed fluorescent inorganic photoresist demonstrates the utility of intrinsic fluorescence for understanding EUV lithography processes.
  • This approach can guide the design of next-generation photoresists with improved performance and controllability.