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Updated: Oct 15, 2025

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
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New Simulation Method for Dependency of Device Degradation on Bending Direction and Channel Length

Yunyeong Choi1, Jisun Park1,2, Hyungsoon Shin1,2

  • 1Department of Electronic and Electrical Engineering, Ewha Womans University, Seoul 03760, Korea.

Materials (Basel, Switzerland)
|October 23, 2021
PubMed

Keywords:
amorphous indium-gallium-zinc-oxide (a-IGZO)bending stresschannel length dependencydevice simulationflexible thin-film transistor (TFT)oxide TFTstrain simulation

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