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Monolayer-Scale GaN/AlN Multiple Quantum Wells for High Power e-Beam Pumped UV-Emitters in the 240-270 nm Spectral
Valentin Jmerik1, Dmitrii Nechaev1, Kseniya Orekhova1
1Centre of Nanoheterostructure Physics, Ioffe Institute, 26 Politekhnicheskaya, 194021 St. Petersburg, Russia.
Nanomaterials (Basel, Switzerland)
|October 23, 2021
Summary
Gallium nitride/aluminum nitride (GaN/AlN) quantum wells grown on sapphire substrates achieve bright ultraviolet light emission. Optimized structures demonstrate high output power for advanced UV emitter applications.
Area of Science:
- Materials Science
- Solid State Physics
- Optoelectronics
Background:
- Development of efficient ultraviolet (UV) light sources is crucial for various applications.
- Electron-beam-pumped emitters offer a pathway to high-power UV generation.
- Gallium nitride/aluminum nitride (GaN/AlN) heterostructures are promising for UV optoelectronics.
Purpose of the Study:
- To grow and characterize monolayer-scale GaN/AlN multiple quantum well (MQW) structures for electron-beam-pumped UV emitters.
- To investigate the impact of growth conditions on material quality and optical properties.
- To achieve high-power UV output in the sub-250-nm spectral range.
Main Methods:
- Growth of GaN/AlN MQW structures on c-sapphire substrates using plasma-assisted molecular beam epitaxy (P-MBE).
- Controlled metal-rich growth conditions to achieve spiral growth and atomically smooth surfaces.
- Characterization of surface topology, stress, quantum confinement, and quantum-confined Stark effect (QCSE).
Main Results:
- Achieved ML-stepped terrace-like surface topology and stress-free conditions for wells below 2 ML.
- Obtained bright UV cathodoluminescence (~15 nm linewidth) in the sub-250-nm range due to satisfactory quantum confinement and mitigated QCSE.
- Demonstrated output optical power of ~1 W at 240 nm (400 QWs, 20 keV, 65 mA) and up to 11.8 W (12.5 keV, 450 mA) with different electron guns.
Conclusions:
- Monolayer-scale GaN/AlN MQW structures grown under controlled conditions are suitable for UV emitters.
- Stress-free, high-quality quantum wells enable efficient UV light generation.
- The demonstrated high output power highlights the potential for practical, high-performance electron-beam-pumped UV sources.
